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8 Mbit (x16) Multi-Purpose Flash Plus
A Microchip Technology Company
SST39VF801C / SST39VF802C / SST39LF801C / SST39LF802C
Data Sheet
Table 14: Recommended System Power-up Timings
Symbol
T PU-READ1
Parameter
Power-up to Read Operation
Minimum
100
Units
μs
T PU-WRITE
1
Power-up to Program/Erase Operation
100
μs
T14.0 25041
1. This parameter is measured only for initial qualification and after a design or process change that could affect this
parameter.
Table 15: Capacitance (T A = 25°C, f=1 Mhz, other pins open)
Parameter
Description
Test Condition
Maximum
C I/O
1
I/O Pin Capacitance
V I/O = 0V
12 pF
C IN1
Input Capacitance
V IN = 0V
6 pF
T15.0 25041
1. This parameter is measured only for initial qualification and after a design or process change that could affect this
parameter.
Table 16: Reliability Characteristics
Symbol
N END1,2
T DR1
I LTH1
Parameter
Endurance
Data Retention
Latch Up
Minimum Specification
10,000
100
100 + I DD
Units
Cycles
Years
mA
Test Method
JEDEC Standard A117
JEDEC Standard A103
JEDEC Standard 78
T16.2 25041
1. This parameter is measured only for initial qualification and after a design or process change that could affect this
parameter.
2. N END endurance rating is qualified as a 10,000 cycle minimum for the whole device. A sector- or block-level rating would
result in a higher minimum specification.
?2011 Silicon Storage Technology, Inc.
18
DS25041A
05/11
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